Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

By Hai Lu, W. Schaff, Jeonghyun Hwang, Hong Wu, G. Koley, L. Eastman. 2001

262 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9d3a137719b47a3e3db16d161ac360829001a011