Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2

By S. Horzum, Hasan Sahin, S. Cahangirov, P. Cudazzo, Angel Rubio, T. Serin, F. M. Peeters. 2013

195 citations recorded by the source corpus.

This work was supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem programme of the Flemish government. Computational resources were partially provided by TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). H.S. is supported by a FWO Pegasus Marie Curie Long Fellowship.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9ce9a0989c16d2b01eecee1c5414441e2987f495

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In Materials Chemistry

1. Yu Huang
2. Xiangfeng Duan
3. Yuan Liu
4. R. Vajtai
5. T. Yu
6. Chunxiao Cong
7. J. Lou
8. Y. Gong

Citations in the corpus

• Chemical vapor deposition growth of monolayer MoSe2 nanosheets (2014, background): “7 cm–1 for bulk MoSe2, in agreement with the literature [32, 33, 43, 48].”
• Chemical vapor deposition growth of crystalline monolayer MoSe2. (2014, background): “Two main peaks appear in the Raman spectra: a sharp one at low wavenumber (239 cm (1)) characteristic of the A1g mode of MoSe2 (out of plane vibration) and a broad one at higher wavelength (301 cm (1)) characteristic of the E2g mode (in-plane vibration).(40,41) The nearly identical peak posi-”
• Thermal conductivity determination of suspended mono- and bilayer WS2 by Raman spectroscopy (2015, background): “Thus, the small shifts of  (1)2g E ( ) and  1g A ( ) frequencies between suspended and supported samples possibly arise from the slight differences of charge carrier concentration, and biaxial strain [44, 45] caused by the substrate effect, respectively.”