Electronic structure of Pt based topological Heusler compounds with C1b structure and zero band gap

By S. Ouardi, C. Shekhar, G. Fecher, X. Kozina, G. Stryganyuk, Claudia Felser, S. Ueda, Keisuke L. I. Kobayashi. 2011

161 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9cc5d1f20fd6863fb9431ccf15e3d154f0c985a5

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Stuart S. P. Parkin
2. A. Nayak
3. Lukas Wollmann
4. Claudia Felser
5. C. Marrows

In Electronic, Optical and Magnetic Materials

1. Stuart S. P. Parkin
2. Lukas Wollmann
3. A. Nayak
4. Claudia Felser

In Materials Chemistry

1. Stuart S. P. Parkin
2. Claudia Felser
3. Lukas Wollmann
4. A. Nayak
5. C. Marrows

Citations in the corpus

• Heusler 4.0: Tunable Materials (2016, background): “Half-Heusler semiconductors with 8 or 18 VEs exist with a wide range of band-gaps (79, 80), and the possibility to find half -Heuslers with a topologically non-trivial state was quickly realized (81, 82).”