Electronic structure of the negatively charged silicon-vacancy center in diamond

By L. Rogers, K. D. Jahnke, Marcus W. Doherty, A. Dietrich, L. McGuinness, C. Muller, T. Teraji, H. Sumiya, J. Isoya, N. Manson and 1 more. 2013

201 citations recorded by the source corpus.

The negatively-charged silicon-vacancy (SiV$^-$) center in diamond is a promising single photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a $\langle111\rangle$ aligned split-vacancy structure with $D_{3d}$ symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738 nm optical resonance.

Subfields: Atomic and Molecular Physics, and Optics, Geophysics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9cb7b597e5f3e5d0130cacb8e68df48fb01d96a6

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In Atomic and Molecular Physics, and Optics

In Geophysics

In Materials Chemistry

Citations in the corpus

Ab Initio Magneto-Optical Spectrum of Group-IV Vacancy Color Centers in Diamond (2018, background): “Both (2)Eu and (2)Eg states are dynamic Jahn-Teller systems [4,6,54].”
Electron–phonon processes of the silicon-vacancy centre in diamond (2014, background): “This was attributed to thermal relaxation reducing the effective lifetime of the upper branch via the decay rate γ− u, which is faster than γ+ u by the Boltzmann factor γ γ λ=− + k Texp ( ) u u so u B [30, 31].”