Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

By B. Luo, J. W. Johnson, J. Kim, R. Mehandru, Fan Ren, B. Gila, A. Onstine, C. Abernathy, S. Pearton, A. Baca and 4 more. 2002

165 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/9c89c07e1ae43f74d86a183de777707381ab0fe7