Weak-localization magnetoresistance and valley symmetry in graphene.
By E. McCann, Kostyantyn Kechedzhi, Vladimir Fal'ko, H. Suzuura, T. Ando, Boris L. Altshuler. Physical Review Letters, 2006
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Because of the chiral nature of electrons in a monolayer of graphite (graphene) one can expect weak antilocalization and a positive weak-field magnetoresistance in it. However, trigonal warping (which breaks p-->-p symmetry of the Fermi line in each valley) suppresses antilocalization, while intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore conventional negative magnetoresistance. We show this by evaluating the dependence of the magnetoresistance of graphene on relaxation rates associated with various possible ways of breaking a "hidden" valley symmetry of the system.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/9bf844ea28064c7eea3b2ac15dd1c379a5f76311
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In Atomic and Molecular Physics, and Optics
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Citations in the corpus
- Colloquium: The transport properties of graphene: An introduction (2010, background): “…forward scattering is enhanced and one should expect weak anti-localization effects to manifest themselves, that is, if τiv τϕ we have (ignoring τw) (McCann et al., 2006; Suzuura and Ando, 2002) σawl − σ0 > 0 , (42) where σawl represents the enhancement (anti-localizing effect) of the…”
- Anderson Transitions (2007, background): “First, there exists an SU(2) symmetry group in the space of the valleys , with the generators (McCann et al., 2006) Λx = σ3τ1, Λy = σ3τ2, Λz = σ0τ3 , (6.74) all of which commute with the Hamiltonian.”
- Novel effects of strains in graphene and other two dimensional materials (2015, background): “These experiments allow for the definition of three different scattering times [237, 246]: (i) τ0, a scattering time which changes momentum but does not influence the phase of the wavefunction, (ii) τ∗, which describes the suppression of interference associated to random fluctuations”
- Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition. (2010, methodology): “The inter-grain WL feature we observed at low temperature can be well fitted to the WL theory developed for graphen”
- Experimental Review of Graphene (2011, background): “The increasing temperature reduces the dephasing 26 time τφ of the phase of the electron due to thermal fluctuations, while decreasing carrier density increases the intervalley and intravalley elastic scattering times τi and τ∗ defined in the theory of reference (McCann et al., 2006).”