Handbook on physical properties of semiconductors
By 安達 定雄. 2004
347 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics
View Paper: https://www.semanticscholar.org/paper/9be89e34e579b2a0979837fe43c7992fdef4f755
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In Atomic and Molecular Physics, and Optics
Citations in the corpus
- Performance of the modified Becke-Johnson potential (2012, methodology): “As a general result, this potential causes a rigid displacement of the conduction bands toward higher energies with respect to the top of the valence band with small differences in the dispersion at some regions of the Brillouin zone but reproducing, in general, the characteristic behavior of the ba”
- Frontiers of Mid-IR Lasers Based on Transition Metal Doped Chalcogenides (2018, background): “Physical properties [48]–[50] Crystal lattice∗ ZB ZB ZB W W ZB Band Gap, eV 3.”
- Properties Of Semiconductor Alloys Group Iv Iii V And Ii Vi Semiconductors (2016, background): “25) is known as the Nordheim rule [50,51] and can be readily converted to the lattice thermal conductivity K”
- Surface‐Dominated Transport Properties of Silicon Nanowires (2008, background): “6 10(15) cm 3 at room temperature, respectively.([22]) It is surprising to note that, although the hole mobility of SiNW estimated from NW FET is far smaller than that of the original Si wafer, the hole concentration in SiNW is about two orders of magnitude higher than that in the Si wafer, which ma”