AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

By R. Mehandru, B. Luo, J. Kim, Fan Ren, B. Gila, A. Onstine, C. Abernathy, S. Pearton, D. Gotthold, R. Birkhahn and 7 more. 2003

136 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/9b901e1bc8f9b45490ebb0ee771a14db9e5eb4ba

Citations in the corpus

• Navigation aids in the search for future high-k dielectrics: Physical and electrical trends (2007, unknown): “0 [24] 1.”