CVD Growth of MoS2‐based Two‐dimensional Materials

By Hongfei Liu, S. L. Wong, D. Chi. 2015

186 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9b5a7d70347ca2f667d1c579a999b1a4c9418231

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Lei Song
2. Yuan Hu

In Materials Chemistry

1. Yuan Hu
2. Lei Song
3. Xin Wang
4. W. Xing
5. Sanjay Kumar Banerjee
6. Hema C. P. Movva
7. Amritesh Rai
8. D. Taneja

Citations in the corpus

• Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “Alharbi et al. used sub-stoichiometric HfOx as the top gate dielectric in FETs fabricated on CVD-grown monolayer MoS2 and achieved an RC as low as ~480 Ω·µm under heavy HfOx doping (>100× improvement than the light HfOx doping case) and a mobility of ~64 cm2/V-s (Figure 7e shows the improvement in R”
• MoS2/Polymer Nanocomposites: Preparation, Properties, and Applications (2017, background): “However, graphene has the zero-band gap shortcoming which limits its applications in the fields of electronic and optoelectronic devices such as transistors.(2) In this context, single- or few-layered nanosheets of layered transition metal”