Low-temperature photocarrier dynamics in monolayer MoS2

By T. Korn, S. Heydrich, M. Hirmer, Johannes Schmutzler, C. Schüller. 2011

725 citations recorded by the source corpus.

The band structure of MoS2 strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS2. Single-layer MoS2 therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescence measurements on single-layer MoS2 flakes prepared by exfoliation. We observe the emergence of two distinct photoluminescence peaks at low temperatures. The photocarrier recombination at low temperatures occurs on the few-picosecond timescale, but with increasing temperatures, a biexponential photoluminescence decay with a longer-lived component is observed.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9aed82b322d86c63c91ff9a480041821fa1823ab

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In Materials Chemistry

1. Hongyi Yu
2. W. Yao
3. Xiaodong Xu
4. X. Cui
5. K. Mak
6. J. Shan
7. Di Xiao

Citations in the corpus

• Mode-locked thulium fiber laser with MoS2 (2015, background): “4 ~100 ps [24, 25], corresponding respectively to the intraband”