Electronic doping and scattering by transition metals on graphene

By K. Pi, K. McCreary, Wenzhong Bao, Wei Han, Y. Chiang, Yan Li, S. Tsai, C. N. Lau, R. Kawakami. 2009

249 citations recorded by the source corpus.

We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular-beam epitaxy combined with in situ transport measurements. The room-temperature deposition of TM onto graphene produces clusters that dope $n$ type for all TM investigated (Ti, Fe, and Pt). We also find that the scattering by TM clusters exhibits different behavior compared to $1/r$ Coulomb scattering. At high coverage, Pt films are able to produce doping that is either $n$ type or weakly $p$ type, which provides experimental evidence for a strong interfacial dipole favoring $n$-type doping as predicted theoretically.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9ae405ec8298b908ac1fc7ffd22e43f4d730e78f

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Transition metal adatoms on graphene: A systematic density functional study (2015, background): “In any case, TMs ndope graphene, as experimentally observed for Ti, Fe, and Pt [36].”
Colloquium: The transport properties of graphene: An introduction (2010, background): “[We note that the conductivity of graphene covered by metal clusters it is still far from being fully understood (Pi et al., 2009).]”
Gate-Controlled Ionization and Screening of Cobalt Adatoms on a Graphene Surface (2010, background): “Adsorbates on graphene can, for example, induce Coulomb scatterin”