Large Tunneling Magnetoresistance at Room Temperature Using a Heusler Alloy with the B2 Structure
By K. Inomata, S. Okamura, R. Goto, N. Tezuka. 2003
247 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/9a3e3ca6623fbc38efd07d7331b3ecbc9093480a
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Heusler Compounds—A Material Class With Exceptional Properties (2011, methodology): “In pressed powder compacts, which act as a series of MTJs, a MR of 30% was reported in a small external field of 0.1 T. This triggered an enourmous research activity focusing on the implementation of this material into spintronic devices [ 68 ], [79]‐[81].”
- Roadmap for Emerging Materials for Spintronic Device Applications (2015, methodology): “[3] measured a large tunneling magnetoresistance (TMR) in bulk full-Heusler Co2(Cr, Fe)Si alloy, followed by a similar measurement in a thin-film form [4].”