Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕InAlAs transistor
By J. Lusakowski, Wojciech Knap, N. Dyakonova, L. Varani, J. Mateos, T. González, Y. Roelens, S. Bollaert, A. Cappy, K. Karpierz. 2005
143 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/9a18f6ee0eb2f3e4c1791f759923a8d4e7367e14
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- Kubilay Sertel
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Citations in the corpus
- A Broadband Focal Plane Array Camera for Real-time THz Imaging Applications (2013, background): “Novel ultrafast electronic devices, such as heterostructure backward diodes can exhibit extremely high cutoff frequencies [6] and 2-D electron gas (2DEG) high electron mobility transistors (HEMTs) are capable of operating at frequencies well above 1 THz [7].”