Chalcogenide Perovskites- an Emerging Class of Ionic Semiconductors
By S. Pereraa, H. Huia, Chuan Zhao, Hongtao Xue, F. Sun, C. Deng, N. Gross, C. Milleville, Xiaohong Xu, David F. Watson and 4 more. 2016
272 citations recorded by the source corpus.
Abstract We report the synthesis and characterization of a novel class of ionic semiconductor materials – inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV–vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/996a8b944c18e9fe3aff184701079979515bd73d
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In Materials Chemistry
Citations in the corpus
- Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics (2019, background): “Intense green luminescence characteristics were found in both undoped and heavily n- and p-doped SrHfS3 [28].”