Electrical properties of zinc oxide nanowires and intramolecular p–n junctions

By C. Liu, W. Yiu, F. C. Au, J. Ding, Chun‐Sing Lee, Shui-Tong Lee. 2003

151 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9937b76f2151b4eed38c58f004bdac522310fe7e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Zhiyong Fan
2. J. Lu
3. A. Jani
4. W. Park
5. Chunrui Wang
6. Dusan Losic
7. Nicolas H. Voelcker
8. G. Yi

In Materials Chemistry

1. Zhiyong Fan
2. J. Lu
3. Chunrui Wang
4. W. Park
5. Pai-chun Chang
6. G. Yi
7. A. Jani
8. Dusan Losic

Citations in the corpus

• Nanoporous anodic aluminium oxide: Advances in surface engineering and emerging applications (2013, methodology): “I–V measurements of ZnO nanowires in AAO substrate confirmed that the wires’ average resistivity was about one order of magnitude higher than that of non-templated ZnO nanowires [229].”
• ZnO nanorods: synthesis, characterization and applications (2005, background): “For example, recently, a wide variety of nanodevices including ultraviolet photodetectors [26, 78, 109–111], sensors [102, 112, 113], field effect transistors [27], intramolecular p–n junction diodes [114], Schottky diodes [115] and light emitting device arrays [116] have been fabricated utilizing Z”
• Quasi-one-dimensional metal oxide materials—Synthesis, properties and applications (2006, background): “to realize ZnO intra-nanowire p–n junction [81].”