Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition

By M. Cho, Y. Roh, C. Whang, K. Jeong, S. Nahm, D. Ko, Je‐hun Lee, N. Lee, K. Fujihara. 2002

334 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/983ddcbf63143733515244485a1c883f26b9c50d