Electronic structure of epitaxial graphene layers on SiC: effect of the substrate.

By F. Varchon, R. Feng, J. Hass, Xuebin Li, B. Nguyen, C. Naud, P. Mallet, J. Veuillen, C. Berger, E. Conrad and 1 more. Physical Review Letters, 2007

607 citations recorded by the source corpus.

A strong substrate-graphite bond is found in the first all-carbon layer by density functional theory calculations and x-ray diffraction for few graphene layers grown epitaxially on SiC. This first layer is devoid of graphene electronic properties and acts as a buffer layer. The graphene nature of the film is recovered by the second carbon layer grown on both the (0001) and (0001[over]) 4H-SiC surfaces. We also present evidence of a charge transfer that depends on the interface geometry. Hence the graphene is doped and a gap opens at the Dirac point after three Bernal stacked carbon layers are formed.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9815d864c92416b75605ac66e3da9fd16ec08196

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Citations in the corpus

Substrate-induced bandgap opening in epitaxial graphene. (2007, background): “This is particularly so in view of the small layer separation of ≈ 2 Å [31] and the AB stacking usually expected for very thin graphene samples.”
Recent advances in chemical modifications of graphene (2015, methodology): “The chemical exfoliation of graphite is another well-established procedure used to produce large quantities of graphene [45].”
Raman spectroscopy and imaging of graphene (2008, background): “Some theoretical [54, 74] and experimental studies on EG, e.”
Surface transfer doping of semiconductors (2009, background): “As such, the SiC nanomesh has also been referred to as interfacial graphene or buffer layer [134–136].”
Production and processing of graphene and related materials (2020, background): “This layer consists of C atoms in a graphene arrangement [590, 592, 668].”