Pit formation during graphene synthesis on SiC(0001):In situelectron microscopy

By J. Hannon, R. Tromp. 2008

148 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/978f7ebae17e2127914000606f00920dd304b0f6

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. H. Tetlow
2. Dimitri D. Vvedensky
3. Ian J. Ford
4. J. Coraux
5. J. Boer
6. L. Kantorovich
7. T. Iakimov

In Electrical and Electronic Engineering

1. T. Iakimov

In Materials Chemistry

1. H. Tetlow
2. Dimitri D. Vvedensky
3. Ian J. Ford
4. J. Coraux
5. J. Boer
6. L. Kantorovich
7. T. Iakimov
8. Rositsa Yakimova

Citations in the corpus

• Growth of Epitaxial Graphene: Theory and Experiment (2014, background): “eoriststoconsiderEPasaviabletoolinfurtherexplorationsof nucleationandgrowthonSiC. A number of experimental observations have suggested that the nucleation and growth of graphene is influencedbySiCsteps[68,373,375]. Kageshimaetal. [376,377]performedaseriesofDFTstudiesbased on the geometry optimization”
• Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, background): “It has been shown that a more homogeneous graphene layer can be produced by using a short period of high temperature annealing in comparison with a longer period of heating at a lower temperature [89,90].”