Experimental evidence for epitaxial silicene on diboride thin films.

By A. Fleurence, R. Friedlein, T. Ozaki, H. Kawai, Ying Wang, Y. Yamada-Takamura. Physical Review Letters, 2012

1,340 citations recorded by the source corpus.

As the Si counterpart of graphene, silicene may be defined as an at least partially sp2-hybridized, atom-thick honeycomb layer of Si that possesses π-electronic bands. Here we show that two-dimensional, epitaxial silicene forms through surface segregation on zirconium diboride thin films grown on Si wafers. A particular buckling of silicene induced by the epitaxial relationship with the diboride surface leads to a direct π-electronic band gap at the Γ point. These results demonstrate that the buckling and thus the electronic properties of silicene are modified by epitaxial strain.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9745df1c845b419849648977c775d8895a65e9af

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In Atomic and Molecular Physics, and Optics

1. Tanmoy Das
2. Hsin Lin
3. Arun Bansil
4. J. Shan
5. Hector Ochoa
6. I. Vera-Marun
7. Yi Cui
8. Di Xiao

In Materials Chemistry

1. J. Shan
2. Mauricio Terrones
3. T. Heinz
4. Tanmoy Das
5. Di Xiao
6. Hsin Lin
7. Yi Cui
8. K. Novoselov

Citations in the corpus

• Colloquium : Topological band theory (2016, background): “2013) Although silicene has been grown on various substrates, the resulting electronic and geometric structures may be quite different from those of freestanding silicene films.(Vogt et al. 2012; Feng, Ding, et al. 2012; Fleurence et al. 2012; Meng et al. 2013) Honeycomb III-V thin films are a natur”
• Colloquium : Spintronics in graphene and other two-dimensional materials (2019, background): “Silicene (A. Fleurence et al., 2012; Vogt et al., 2012), a single layer of silicon atoms forming a sp3-like honeycomb lattice, has attracted much attention due to its resemblance with graphene.”