Electroluminescence in single layer MoS2.
By R. Sundaram, Michael S. Engel, Antonio Lombardo, R. Krupke, Andrea C. Ferrari, Phaedon Avouris, M. Steiner. Nano letters (Print), 2012
988 citations recorded by the source corpus.
We detect electroluminescence in single layer molybdenum disulfide (MoS2) field-effect transistors built on transparent glass substrates. By comparing the absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8 eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, could be promising for novel optoelectronic devices, such as two-dimensional light detectors and emitters.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/974066c4f086d931609a29142a72d5c5f7b18ce4
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In Materials Chemistry
- Mark C. Hersam
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- Fengnian Xia
- Xiangfeng Duan
- Thomas Mueller
- E. Malic
- Edmund J. R. Kelleher
- R. I. Woodward
Citations in the corpus
- Excitons in atomically thin 2D semiconductors and their applications (2017, background): “[57] fabricated a Schottky junction between monolayer MoS2 and a Cr/Au contact.”