Electron-hole generation and recombination rates for Coulomb scattering in graphene
By Farhan Rana. 2007
147 citations recorded by the source corpus.
We calculate electron-hole generation and recombination rates for Coulomb scattering (Auger recombination and impact ionization) in zero band-gap graphene. The conduction and valence band dispersion relation in graphene together with energy and momentum conservation requirements restrict the phase space for Coulomb scattering so that electron-hole recombination times can be much longer than $1\phantom{\rule{0.3em}{0ex}}\mathrm{ps}$ for electron-hole densities smaller than ${10}^{12}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/97114d1cdbb8ef65d79f17f39570d7beffa4934b
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Graphene Terahertz Plasmon Oscillators (2007, methodology): “Results in [24] show that electron–hole recombination times due to Auger scattering in graphene are weakly temperature dependent and can range from 1 to 100 ps for electron–hole densities in the 10 –10 cm range.”
- Monolayer graphene as a saturable absorber in a mode-locked laser (2010, unknown): “[25], the electron‐hole recombination rate (τ2) is quite fast (< 1 ps) in our experimental observation.”