Transparent semiconducting oxides: materials and devices
By Marius Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, H. von Wenckstern. 2010
145 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/95381a106f85f517c49fcf8e1112d85be7831da2
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor (2014, background): “Nevertheless, amorphous oxide semiconductors (AOSs) channel layers are required typically carrier concentrations ,10(17) cm 3 for achieving good switching operation.(33) As discussed above, the pure form of oxide semiconductors is polycrystalline and possesses the high carrier concentrations.”