Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
By N. Iizuka, K. Kaneko, N. Suzuki. 2002
191 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Condensed Matter Physics
View Paper: https://www.semanticscholar.org/paper/9490a859ad2f605f5b7e391d269c6fb8dd70b19a
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Citations in the corpus
- III-nitride semiconductors for intersubband optoelectronics: a review (2013, background): “5 μm wavelength range by changing the QW thickness from 1 to 7 nm [14, 28, 35, 36, 38, 60, 73, 80, 81] with AlN barriers thicknesses in the 1.”