High Mobility in a Stable Transparent Perovskite Oxide

By Hyungjoon Kim, U. Kim, H. Kim, Tai-Hoon Kim, H. Mun, Byung-Gu Jeon, K. Hong, Woong-Jhae Lee, Chanjong Ju, K. Kim and 1 more. 2012

329 citations recorded by the source corpus.

We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm2 V-1 s-1 at a doping level of 8×1019 cm-3, constituting the highest value among wide-band-gap semiconductors. In epitaxial films, the maximum mobility was 70 cm2 V-1 s-1 at a doping level of 4.4×1020 cm-3. We also show that resistance of (Ba,La)SnO3 changes little even after a thermal cycle to 530 °C in air, pointing to an unusual stability of oxygen atoms and great potential for realizing transparent high-frequency, high-power functional devices.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9461a4b7d821ed8aa8f3c293619bfaf51dd62499