Effects of Back Contact Instability on Cu2ZnSnS4 Devices and Processes

By J. Scragg, T. Kubart, J. Wätjen, T. Ericson, M. Linnarsson, C. Platzer‐Björkman. 2013

295 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/941f5a8559f5c6af9769d5b44dc9f12cf1b3c944

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Martin A. Green
2. David B. Mitzi

In Electrical and Electronic Engineering

1. X. Hao
2. Martin A. Green
3. Fang-yang Liu
4. H. Cui
5. Yu Feng
6. G. Conibeer
7. Xiaolei Liu
8. David B. Mitzi

In Materials Chemistry

1. Martin A. Green
2. X. Hao
3. Fang-yang Liu
4. H. Cui
5. Yu Feng
6. G. Conibeer
7. Xiaolei Liu
8. Ramesh Dasharathy

Citations in the corpus

• The current status and future prospects of kesterite solar cells: a brief review (2016, background): “The band gap of Cu2ZnSnSe4: effect of order–disorder.”
• Characterization of a CZTS thin film solar cell grown by sputtering method (2014, background): “The presence of the MoS2 layer at the interface between CZTS and Mo back contact could also be responsible for high series resistance in CZTS devices (Mitzi et al., 2011; Scragg et al., 2013).”