Graphene and molybdenum disulfide hybrids: synthesis and applications
By Nanjundan Ashok Kumar, M. Dar, R. Gul, Jong‐Beom Baek. 2015
159 citations recorded by the source corpus.
Graphene and related inorganic two-dimensional (2D) nanomaterials are an exceptional class of compounds with exotic properties that are technologically intriguing. While graphene itself is chemically inert and a gapless semimetal, its isostructural analog, molybdenum disulfide (MOS 2 ) is chemically versatile with band gaps, thereby finding significant use in a myriad of applications. Although these 2D nanomaterials individually possess tremendous authority for various applications, the combination of these materials in the recent past has created a new paradigm in emerging applications. Here, we summarize the current state-of-the-art and progress over the past three years on the development of hybrids of these layered materials. We highlight their pivotal role in electrochemical energy storage, sensing, hydrogen generation by photochemical water splitting and electronic device applications such as field-effect transistors. Perspectives on the challenges and opportunities for the exploration of these 2D layered hybrid materials are put forward.
Subfields: Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/93de72284afe26a6c1216e42034f55e3ae77ed2b
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In Materials Chemistry
In Renewable Energy, Sustainability and the Environment
Citations in the corpus
- Multifunctional epoxy nanocomposites reinforced by two-dimensional materials: A review (2021, background): “Additionally, MoS2 [17] is a chemically versatile 2D material, compared to the chemically-inert graphene, showing the largest piezoelectric activity among 2D materials [18].”
- Recent Developments in 2D Nanomaterials for Chemiresistive-Type Gas Sensors (2018, background): “6 a Schematic illustration of MoS2-based FETs for NO2 sensing. b SEM image of two-layer MoS2-based FETs. c NO2 sensing property of two-layer MoS2-based FETs with and without applied gate voltage at the gas concentration in the range of 100–1000 ppm. Reprinted with permission from Ref.”