Intersubband absorption linewidth in GaAs quantum wells due to scattering by interface roughness, phonons, alloy disorder, and impurities
By T. Unuma, M. Yoshita, T. Noda, H. Sakaki, H. Akiyama. 2002
249 citations recorded by the source corpus.
We calculate the intersubband absorption linewidth 2Γop in quantum wells (QWs) due to scattering by interface roughness, LO phonons, LA phonons, alloy disorder, and ionized impurities, and compare it with the transport energy broadening 2Γtr=2ℏ/τtr, which corresponds to the transport relaxation time τtr related to the electron mobility μ. Numerical calculations for GaAs QWs clarify the different contributions of each individual scattering mechanism to the absorption linewidth 2Γop and transport broadening 2Γtr. Interface roughness scattering contributes about an order of magnitude more to the linewidth 2Γop than to the transport broadening 2Γtr, because the contribution from the intrasubband scattering in the first excited subband is much larger than that in the ground subband. On the other hand, LO phonon scattering (at room temperature) and ionized impurity scattering contribute much less to the linewidth 2Γop than to the transport broadening 2Γtr. LA phonon scattering makes comparable contributions to ...
Subfields: Atomic and Molecular Physics, and Optics, Spectroscopy
View Paper: https://www.semanticscholar.org/paper/93db3ef65c9366a729e70afe41e5ff7cd15ffc81
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In Atomic and Molecular Physics, and Optics
In Spectroscopy
Citations in the corpus
- A density matrix model of transport and radiation in quantum cascade lasers (2010, methodology): “Concerning the simulation, we have taken typical parameters for the various scattering mechanisms; the interface roughness is modelled [19] with a value of 3 = 90 Å for the correlation length of the steps, 1 = 1.”