The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

By Di Zhu, Jiuru Xu, A. Noemaun, Jong Kyu Kim, E. Fred Schubert, M. Crawford, D. Koleske. 2009

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We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple quantum well light-emitting diodes (LEDs), from 5.5 to 2.4, as Si-doping is applied to an increasing number of quantum barriers (QBs). The minimum ideality factor of 2.4 is obtained when all QBs are doped. It is shown that polarization-induced triangular band profiles of the undoped QBs are the major cause of the high ideality factors in GaInN/GaN LEDs. Numerical simulations show excellent agreement with the measured ideality factor value and its dependence on QB doping.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/93bdafa2ba5e875932bef02f1ae71d076fe3b80d