Generalized Einstein relation for disordered semiconductors—implications for device performance

By Y. Roichman, Nir Tessler. 2001

275 citations recorded by the source corpus.

The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on the existence of quasiequilibrium only. Our analysis shows that there is an inherent dependence of the transport in trap-free disordered organic materials on the charge density. The implications for the contact phenomena and exciton generation rate in light emitting diodes as well as channel width in field-effect transistors is discussed.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/93af433d48a7a751268eaeb4dd9d4bcb3ea058d4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. A. Köhler
2. V. Dyakonov
3. Carsten Deibel
4. H. Bässler

In Electrical and Electronic Engineering

1. V. Dyakonov
2. Carsten Deibel
3. H. Bässler
4. A. Köhler

Citations in the corpus

• Charge transport in organic semiconductors. (2012, background): “The reason is that disorder gives rise to an anomalous spatial spreading of the packet of charges that increases with electric field and degree of disorder [57–61].”
• Polymer–fullerene bulk heterojunction solar cells (2010, background): “Neglecting process (2) as it is faster than (1), the finding of electron and hole depends on the sum of their diffusivities or—considering the Einstein relation [143, 144]— their mobilities.”