Tuning carbon nanotube band gaps with strain.
By E. Minot, Y. Yaish, V. Sazonova, Ji-Yong Park, M. Brink, Paul L. McEuen. Physical Review Letters, 2002
595 citations recorded by the source corpus.
We show that the band structure of a carbon nanotube (NT) can be dramatically altered by mechanical strain. We employ an atomic force microscope tip to simultaneously vary the NT strain and to electrostatically gate the tube. We show that strain can open a band gap in a metallic NT and modify the band gap in a semiconducting NT. Theoretical work predicts that band gap changes can range between +/-100 meV per 1% stretch, depending on NT chirality, and our measurements are consistent with this predicted range.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/93af2ec78bc2b612e6543dcc884248839cde19d2
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Citations in the corpus
- The Emergence of AI-Based Wearable Sensors for Digital Health Technology: A Review (2023, background): “…composites with fillers: (a) loss of contact between neighboring fillers leading to disconnection mechanism, (b) alternations in tunneling distance between adjacent fillers relative to the tunneling mechanism, and (c) deformations of fillers, altering their intrinsic piezoresistive properties [91,92].”
- Strain effects in graphene and graphene nanoribbons: The underlying mechanism (2010, background): “For carbon nanotubes, it has been established that the band structure can be dramatically altered by strain [18, 19].”
- Tailoring Piezoresistive Sensitivity of Multilayer Carbon Nanotube Composite Strain Sensors (2008, background): “An aqueous solution of poly (sodium 4-styrene-sulfonate) (PSS, 1,000,000 Mw, Aldrich) of various concentrations is employed to provide suspension and dispersion of SWNTs in solution form.”
- Raman spectroscopy and imaging of graphene (2008, methodology): “The stressed graphene may have very important applications as the properties of graphene (optical and electronic properties) can be adjusted by stress, where stress studies in CNTs have already set good example.([62-64]) Stress engineering using SiGe alloy has already been used in the IC fabrication”
- Ultra-strength materials (2010, background): “Large electronic-structure changes are expected to occur in materials in the ultra-strength regime [7,8,14,9,10,20].”
- Mechanical systems in the quantum regime (2011, background): “Furthermore, kdc and kR = mω2 R are the static and dynamic spring constants [165–167], Cg is the capacitance to the gate and u0 the zero-point motion (see Section 1 for its definition and the discussion in Section 3).”
- Quantum transport in carbon nanotubes (2014, methodology): “The sensitivity of the bandgap to uniaxial strain has been measured by using an AFM tip to apply tension to suspended nanotubes (Minot et al., 2003).”