Polarity control in double-gate, gate-all-around vertically stacked silicon nanowire FETs

By M. D. Marchi, D. Sacchetto, S. Frache, Jian Zhang, P. Gaillardon, Yusuf Leblebici, G. D. Micheli. International Electron Devices Meeting, 2012

276 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/927a34ab4366104a586e7565d293272502338b0a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Takashi Taniguchi
2. Kenji Watanabe

In Electrical and Electronic Engineering

1. Feng Miao
2. Kenji Watanabe
3. Takashi Taniguchi

Citations in the corpus

• Charge-Plasma Based Process Variation Immune Junctionless Transistor (2014, background): “Similar concept is also explored for MOSFETs [15], [16].”
• Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions (2020, background): “10 102 Pstatic = Idd-static × Vdd (4) 103 where Idd-static is the current that flows through the two ETH devices when the inverter 104 is in a steady state.”