Switching terahertz waves with gate-controlled active graphene metamaterials.
By Seung Hoon Lee, Muhan Choi, Teun-Teun Kim, Seungwoo Lee, Ming Liu, Xiaobo Yin, Hongkyw Choi, S. S. Lee, Choon‐Gi Choi, Sung‐Yool Choi and 2 more. Nature Materials, 2012
868 citations recorded by the source corpus.
The extraordinary electronic properties of graphene provided the main thrusts for the rapid advance of graphene electronics. In photonics, the gate-controllable electronic properties of graphene provide a route to efficiently manipulate the interaction of photons with graphene, which has recently sparked keen interest in graphene plasmonics. However, the electro-optic tuning capability of unpatterned graphene alone is still not strong enough for practical optoelectronic applications owing to its non-resonant Drude-like behaviour. Here, we demonstrate that substantial gate-induced persistent switching and linear modulation of terahertz waves can be achieved in a two-dimensional metamaterial, into which an atomically thin, gated two-dimensional graphene layer is integrated. The gate-controllable light-matter interaction in the graphene layer can be greatly enhanced by the strong resonances of the metamaterial. Although the thickness of the embedded single-layer graphene is more than six orders of magnitude smaller than the wavelength (<λ/1,000,000), the one-atom-thick layer, in conjunction with the metamaterial, can modulate both the amplitude of the transmitted wave by up to 47% and its phase by 32.2° at room temperature. More interestingly, the gate-controlled active graphene metamaterials show hysteretic behaviour in the transmission of terahertz waves, which is indicative of persistent photonic memory effects.
Subfields: Biomedical Engineering, Civil and Structural Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/9272e1769e9dd493461b8532548f8d7693b457ea
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Biomedical Engineering
- Sergei A. Tretyakov
- Vladimir M. Shalaev
- A. Díaz-Rubio
- Anthony Grbic
- Alexandra Boltasseva
- Alexander V. Kildishev
- Victor Asadchy
- George V. Eleftheriades
In Civil and Structural Engineering
In Electronic, Optical and Magnetic Materials
- Sergei A. Tretyakov
- George V. Eleftheriades
- Andrea Alù
- A. Díaz-Rubio
- Christophe Caloz
- Victor Asadchy
- Anthony Grbic
- Vladimir M. Shalaev
Citations in the corpus
- Widely Tunable Terahertz Phase Modulation with Gate-Controlled Graphene Metasurfaces (2015, methodology): “[37] that the exact value of d does not influence the final result as long as d is considerably smaller than the wavelength, which is the case in our simulations.”
- An Overview of Signal Processing Techniques for Terahertz Communications (2020, background): “varies the complex conductivity to achieve phase control [293].”
- Sinusoidally Modulated Graphene Leaky-Wave Antenna for Electronic Beamscanning at THz (2013, methodology): “Metalling contact must be defined at the edge of the polysilicon pads by using optical lithography, followed by the evaporation of gold with a chromium adhesive layer and a lift-off process [35].”
- A New Wireless Communication Paradigm through Software-Controlled Metasurfaces (2018, background): “…absorbing, filter-ing and collimation resulting from fascinating metasurface properties such as near zero permittivity and/or permeability response, peculiar anisotropic response leading, e.g., to hyperbolic dispersion relation, giant chirality, non-linear response and more [5], [7], [8].”
- Fano-resonant metamaterials and their applications (2013, neutral): “Sub-stantial gate-induced switching and linear modulation of terahertz waves can thus be achieved in Fano-resonant meta-surfaces at the room temperature [62].”
- THz Wave Modulators: A Brief Review on Different Modulation Techniques (2013, background): “(c) Amplitude transmission spectrum (a), amplitude modulation depth (b) and relative phase shift (c) in dependence on the gate voltage Vg [71].”