Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films

By A. Charrier, A. Coati, T. Argunova, F. Thibaudau, Y. Garreau, R. Pinchaux, I. Forbeaux, J. Debever, M. Sauvage-Simkin, J. Themlin. 2002

212 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/924d56bd320943a159dbf504c2ad386476f4cc60

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. D. Basov
2. Feng Wang
3. Alessandra Lanzara
4. M. Fogler
5. E. Dujardin
6. A. Mahmood
7. C. Soldano
8. Yuanbo Zhang

In Electrical and Electronic Engineering

1. Yuanbo Zhang
2. Feng Wang
3. D. Basov
4. A. Mahmood
5. C. Soldano
6. T. Iakimov
7. E. Dujardin

In Materials Chemistry

1. D. Lahiri
2. A. Nieto
3. A. Agarwal
4. Feng Wang
5. D. Basov
6. E. Dujardin
7. A. Mahmood
8. C. Soldano

Citations in the corpus

• Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, background): “They could control the Si sublimation rate to form single- or a few-layer graphene on 6H-SiC (0001) [86].”
• Graphene NanoPlatelets reinforced tantalum carbide consolidated by spark plasma sintering (2013, background): “Of particular interest is the growth of graphene on SiC wafers by decomposing SiC so that Si atoms sublimate and the remaining carbon atoms become activated by the high temperature (1300 ̊C) employed and undergo graphitization [74, 75].”
• Production, properties and potential of graphene (2010, background): “LEED, X-Ray, STM Formation of large continuous sheet over terraces [69]”