Intrinsic spin Hall effect and orbital Hall effect in 4 d and 5 d transition metals
By T. Tanaka, H. Kontani, M. Naito, T. Naito, D. Hirashima, K. Yamada, J. Inoue. 2007
510 citations recorded by the source corpus.
We study the intrinsic spin Hall conductivity (SHC) in various $5d$ transition metals (Ta, W, Re, Os, Ir, Pt, and Au) and $4d$ transition metals (Nb, Mo, Tc, Ru, Rh, Pd, and Ag) based on the Naval Research Laboratory tight-binding model, which enables us to perform quantitatively reliable analysis. In each metal, the obtained intrinsic SHC is independent of resistivity in the low resistive regime $(\ensuremath{\rho}l50\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\ensuremath{\Omega}\phantom{\rule{0.2em}{0ex}}\mathrm{cm})$ whereas it decreases in proportion to ${\ensuremath{\rho}}^{\ensuremath{-}2}$ in the high resistive regime. In the low resistive regime, the SHC takes a large positive value in Pt and Pd, both of which have approximately nine $d$ electrons per ion $({n}_{d}=9)$. On the other hand, the SHC takes a large negative value in Ta, Nb, W, and Mo, where ${n}_{d}l5$. In transition metals, a conduction electron acquires the trajectory-dependent phase factor that originates from the atomic wave function. This phase factor, which is reminiscent of the Aharonov--Bohm phase, is the origin of the SHC in paramagnetic metals and that of the anomalous Hall conductivity in ferromagnetic metals. Furthermore, each transition metal shows huge and positive $d$-orbital Hall conductivity (OHC), independent of the strength of the spin-orbit interaction. Since the OHC is much larger than the SHC, it will be possible to realize an orbitronics device made of transition metals.
Subfields: Atomic and Molecular Physics, and Optics
View Paper: https://www.semanticscholar.org/paper/921bf45f8a445e104694227aaab5d62d1f5be89e
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In Atomic and Molecular Physics, and Optics
Citations in the corpus
- Antiferromagnetic spintronics (2016, background): “Further studies (Du et al., 2014a; H. L. Wang et al., 2014) demonstrated the impact of d-orbital filling and highlighted the additive nature of effects due to atomic number and orbital filling as calculated by Tanaka et al. (2008).”
- Giant orbital Hall effect and orbital-to-spin conversion in 3d, 5d, and 4f metallic heterostructures (2022, background): “(i) Large orbital Hall conductivities have been predicted in several 3d , 4d , and 5d transition elements [4,11,12] and 2D materials [9,10].”
- Interface-Induced Phenomena in Magnetism (2016, unknown): “o the lateral electric fieldproducing the charge transport . This intrinsic response [Karplus and Luttinger, 1954; Jungwirth et al., 2002; Murakami et al., 2003; Sinova et al., 2004; Guo et al, 2008; Tanaka et al., 2008] depends on electronic structure only, not on impurity scattering. The reciproca”
- Spin transfer torques generated by the anomalous Hall effect and anisotropic magnetoresistance (2014, background): “Some of this variability can be understood from first-principles calculations [56] of the spin Hall effect, which show that the spin Hall conductivity depends sensitively on the Fermi level.”
- Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “(9) for the non-equilibrium spin density s in the adiabatic STT, scales with the strength of the spin-orbit coupling in the paramagnetic metal (Tanaka et al., 2008) and s in the adiabatic STT is inverse proportional to the exchange field (Eq.”
- Skyrmions in magnetic multilayers (2017, background): “a guiding principle for the miniaturization of room-temperature skyrmion by maximizing the interfacial DMI [143, 144, 148, 149]. It should be emphasized here that SOC plays different roles in the SHE [150], as compared with the interfacial DMI. There is no obvious connection between the strength and”
- Spin Hall Effects in Metals (2013, methodology): “model [14], [61], using for all elements for comparison the”
- Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems (2018, background): “, points where neighboring bands get very close to each other, to give very large contribution, similarly to the case of intrinsic SHE (Tanaka et al., 2008).”