Laser operation of a heterojunction bipolar light-emitting transistor
By G. Walter, N. Holonyak, M. Feng, R. Chan. 2004
160 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/92021e5a8d7dd79ad7b8ea8c7cda857d2f0ca5b4
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- A bright future for organic field-effect transistors (2006, methodology): “In a further development, the InGaP/GaAs LET was designed as a transistor laser by incorporation of a resonator cavity and an InGaAs recombination quantum well embedded in the base regio”