Relative importance of the Si–Si bond and Si–H bond for the stability of amorphous silicon thin film transistors

By R. Wehrspohn, S. Deane, I. French, I. Gale, J. Hewett, M. J. Powell, John Robertson. 2000

143 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/912b89e9c995bbe9c8b7647a0af9aec11ab82740