p-ZnO/n-GaN heterostructure ZnO light-emitting diodes
By D. Hwang, S. Kang, Jae-Hong Lim, Eun-Jeong Yang, Jinyong Oh, Jin-Ho Yang, Seong-Ju Park. 2005
335 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/90ef9a9f94722013a12d23864c521aafc692e1a8
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In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Quasi-one-dimensional metal oxide materials—Synthesis, properties and applications (2006, methodology): “Though p-type doping presents a hurdle, progress has been achieved on thin film ZnO p–n junction for light-emitting diode (LED [198,199]) by introducing nitrogen as the p-type dopants.”
- Recent Advances in ZnO-Based Light-Emitting Diodes (2010, background): “(b) EL spectrum of a p-ZnO/n-GaN heterostructure at an injection current of 60 mA [113].”