Laser-thinning of MoS₂: on demand generation of a single-layer semiconductor.
By A. Castellanos-Gómez, Maria Barkelid, S. Goossens, V. Calado, Herre S. J. van der Zant, G. Steele. Nano letters (Print), 2012
606 citations recorded by the source corpus.
Single-layer MoS(2) is an attractive semiconducting analogue of graphene that combines high mechanical flexibility with a large direct bandgap of 1.8 eV. On the other hand, bulk MoS(2) is an indirect bandgap semiconductor similar to silicon, with a gap of 1.2 eV, and therefore deterministic preparation of single MoS(2) layers is a crucial step toward exploiting the large direct bandgap of monolayer MoS(2) in electronic, optoelectronic, and photovoltaic applications. Although mechanical and chemical exfoliation methods can be used to obtain high quality MoS(2) single layers, the lack of control in the thickness, shape, size, and position of the flakes limits their usefulness. Here we present a technique for controllably thinning multilayered MoS(2) down to a single-layer two-dimensional crystal using a laser. We generate single layers in arbitrary shapes and patterns with feature sizes down to 200 nm and show that the resulting two-dimensional crystals have optical and electronic properties comparable to that of pristine exfoliated MoS(2) single layers.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/90c13e903118d8a85aac4e96ad439ae22cc24290
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Citations in the corpus
- Novel effects of strains in graphene and other two dimensional materials (2015, background): “Atomically thin 2D crystals of boron nitride, transition metal dichalcogenides (TMDs) like MoS2 or WS2, black phosphorus, etc, have been recently obtained by means of mechanical exfoliation [77, 184, 231], chemical vapor deposition (CVD) [202, 324] or laser thinning [45].”
- Optoelectronic devices based on two-dimensional transition metal dichalcogenides (2016, background): “[39] demonstrated the laser reduction of the thickness of exfoliated MoS2 down to a single layer.”