Ripples in epitaxial graphene on the Si-terminated SiC(0001) surface
By F. Varchon, P. Mallet, J. Veuillen, L. Magaud. 2008
138 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/904e495c0c51101eaff0c41e4dde5a38a47606c5
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Francesco Bonaccorso
- Andrea C. Ferrari
- C. Backes
- Xiaodong Zhuang
- A. Ciesielski
- Paolo Samorì
- A. Castellanos-Gómez
- Xinliang Feng
In Materials Chemistry
- Kostas Kostarelos
- M. Prato
- Francesco Bonaccorso
- A. Bianco
- A. Castellanos-Gómez
- Jonathan N. Coleman
- Andrea C. Ferrari
- Paolo Samorì
Citations in the corpus
- Production and processing of graphene and related materials (2020, background): “For T > 1350 K, Si depletion from the surface eventually leads a reconstruction presenting a (6 √ 3 × 6 √ 3)R30° LEED pattern [592, 645, 659, 1580, 1581].”
- Growth of Epitaxial Graphene: Theory and Experiment (2014, methodology): “[53] examined the structure of both the buffer layer and the graphene layer on top of the buffer layer for the Si and C terminations of the 6H-SiC surface using DFT.”
- Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene (2011, background): “The (6√3×6√3)R30 o periodicity is imposed by the registry match of SiC and the carbon layer [10,11] and is predicted by theoretical calculations [12,13].”