Ultrafast and spatially resolved studies of charge carriers in atomically thin molybdenum disulfide

By Rui Wang, B. Ruzicka, Nardeep Kumar, Matthew Z. Bellus, Hsin-Ying Chiu, Hui Zhao. 2012

216 citations recorded by the source corpus.

Atomically thin molybdenum disulfide is emerging as a new nanomaterial with potential applications in the fields of electronic and photonics. Charge carrier dynamics plays an essential role in determining its electronic and optical properties. We report spatially and temporally resolved pump-probe studies of charge carriers in atomically thin molybdenum disulfide samples fabricated by mechanical exfoliation. Carriers are injected by interband absorption of a 390-nm pump pulse and detected by measuring differential reflection of a time-delayed and spatially scanned probe pulse that is tuned to an exciton transition. Several parameters on charge carrier dynamics are deduced, including carrier lifetime, diffusion coefficient, diffusion length, and mobility.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8fe600520d6abb182ff1151c0e5322a6fe1bc32b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Edmund J. R. Kelleher
2. R. I. Woodward
3. F. Torrisi
4. Meng Zhang
5. S. Popov
6. J. R. Taylor
7. R. Howe
8. Tawfique Hasan

In Materials Chemistry

1. Edmund J. R. Kelleher
2. R. I. Woodward
3. F. Torrisi
4. G. Hu
5. R. Howe
6. Meng Zhang
7. Tawfique Hasan
8. Qing Zhang

Citations in the corpus

• Few-layer MoS2: a promising layered semiconductor. (2014, background): “and a substantially higher mobility of 800 cm(2)/Vs were achieved.(104) The higher mobility was attributed to”
• Solution processed MoS2-PVA composite for sub-bandgap mode-locking of a wideband tunable ultrafast Er:fiber laser (2015, background): “MoS2 also displays ultrafast carrier dynamics [23, 25, 26], with a reported intraband relaxation time of ~30 fs [23] and carrier life-time of ~100 ps [26].”