Defect formation and phase stability of Cu 2 ZnSnS 4 photovoltaic material
By Akihiro Nagoya, R. Asahi, R. Wahl, Georg Kresse. 2010
288 citations recorded by the source corpus.
View Paper: https://www.semanticscholar.org/paper/8efe8927d917f693a83a276e0c7c4b574b41cc57
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Citations in the corpus
- Thin film solar cell with 8.4% power conversion efficiency using an earth‐abundant Cu2ZnSnS4 absorber (2013, background): “First principle calculations suggest that defects with the lowest formation energy in CZTS are CuZn antisites [14,15].”
- Characterization of a CZTS thin film solar cell grown by sputtering method (2014, background): “In addition, unlike CIGS, CZTS has a rather small window of thermodynamically stable phase (Chen et al., 2010; Nagoya et al., 2010).”
- A Review on Development Prospect of CZTS Based Thin Film Solar Cells (2014, background): “In Cu-rich condition (ΔUCu = 0), it can get the phase boundary of CZTS ZnS, SnS, CuS, and Cu 2 SnS 3 through different combinations of ΔUSn and ΔUs [27, 28].”