Experimental observation of the spin-Hall effect in a two-dimensional spin-orbit coupled semiconductor system.
By J. Wunderlich, B. Kaestner, J. Sinova, T. Jungwirth. Physical Review Letters, 2004
1,067 citations recorded by the source corpus.
We report the experimental observation of the spin-Hall effect in a 2D hole system with spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed coplanar geometry which allows an angle-resolved polarization detection at opposite edges of the 2D hole system. In equilibrium the angular momenta of the spin-orbit split heavy-hole states lie in the plane of the 2D layer. When an electric field is applied across the hole channel, a nonzero out-of-plane component of the angular momentum is detected whose sign depends on the sign of the electric field and is opposite for the two edges. Microscopic quantum transport calculations show only a weak effect of disorder, suggesting that the clean limit spin-Hall conductance description (intrinsic spin-Hall effect) might apply to our system.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/8ec3d6b65874979321f2330881eb249392018ecf
How researchers see this paper
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
- Axel Hoffmann
- J. Sinova
- T. Jungwirth
- A. Manchon
- Julie Grollier
- Mark D. Stiles
- Pietro Gambardella
- I. Miron
Citations in the corpus
- Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “The intrinsic SHE proposal triggered an intense theoretical debate and prompted the experimental discovery of the phenomenon (Kato et al., 2004; Wunderlich et al., 2005).”
- New perspectives for Rashba spin-orbit coupling. (2015, positive): “he amplitude of the spin polarization was weak, and ! 4 the mechanism was attributed to the extrinsic spin Hall effect. The spin Hall effect in a GaAs 2D hole system was observed by Wunderlich et al. [20] in light emitting diodes. The magnitude of the spin polarization is in agreement with the predi”
- Interface-Induced Phenomena in Magnetism (2016, positive): “This is one important mechanism for the property known as the spin Hall effect [D'yakonov and Perel', 1971; Hirsch, 1999; Kato et al., 2004; Wunderlich et al., 2005; Valenzuela and Tinkham, 2006; Hoffmann, 2013; Sinova et al., 2015].”
- Electrical Detection of Magnetization Dynamics via Spin Rectification Effects (2016, methodology): “via Kerr rotation microscopy [200] or polarized electroluminescence [201].”
- Spin Hall Effects in Metals (2013, background): “Conversely, it is possible to generate a spin current via spin Hall effects, which was the basis for the first optical detections of spin Hall effects in semiconductors [7], [8].”