High-intensity terahertz radiation from a microstructured large-area photoconductor
By A. Dreyhaupt, S. Winnerl, T. Dekorsy, M. Helm. 2005
364 citations recorded by the source corpus.
We present a planar large-area photoconducting emitter for impulsive generation of terahertz (THz) radiation. The device consists of an interdigitated electrode metal-semiconductor-metal (MSM) structure which is masked by a second metallization layer isolated from the MSM electrodes. The second layer blocks optical excitation in every second period of the MSM finger structure. Hence charge carriers are excited only in those periods of the MSM structure which exhibit a unidirectional electric field. Constructive interference of the THz emission from accelerated carriers leads to THz electric field amplitudes up to 85V∕cm when excited with fs optical pulses from a Ti:sapphire oscillator with an average power of 100mW at a bias voltage of 65V applied to the MSM structure. The proposed device structure has a large potential for large-area high-power THz emitters.
Subfields: Astronomy and Astrophysics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/8e7413f27fece9073d2b79118bc20bf9e96c3ee2
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Citations in the corpus
- Intense ultrashort terahertz pulses: generation and applications (2011, background): “The electric field direction is indicated by arrows [45].”
- Table-top sources of ultrashort THz pulses (2007, background): “To overcome the problem of such high voltages, Dreyhaupt et al [87, 88] developed a structure with interdigitated electrodes on the semiconductor (see figure 5).”
- THz Active Imaging Systems With Real-Time Capabilities (2011, background): “To put this value further into perspective, we note that a high-repetition-rate fs Ti:sapphire laser can generate THz pulses with an average power of 40 [40], [41] corresponding to a peak power of about 400 mW which, when focused, provides a field amplitude of the order of 100 V/cm.”
- Review of terahertz photoconductive antenna technology (2017, methodology): “This leads to a net constructive interference, providing high intensity THz pulse emission up to 85 V∕cm.(129) This was expanded upon in later works, including demonstration of an interdigitated PCA for THz detection using an unfocused optical gating pulse,(132) study of the dependence of generation”