Hydrogen response mechanism of Pt-GaN Schottky diodes

By J. Schalwig, G. Müller, U. Karrer, M. Eickhoff, Oliver Ambacher, M. Stutzmann, L. Goergens, G. Dollinger. 2002

195 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/8d90c36edf33b74ee31bb31183aab256af340055

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In Condensed Matter Physics

1. Oliver Ambacher

Citations in the corpus

• Gas sensitive GaN/AlGaN-heterostructures (2002, background): “In the case of hydrogen, a third effect occurs which is not related to the existence of pores in the Pt layer and which, therefore, also appears in the case of continuous, non-porous gates [23,24].”