Vacancy formation in (Pb,La)(Zr,Ti)O3 capacitors with oxygen deficiency and the effect on voltage offset

By T. Friessnegg, S. Aggarwal, Ramamoorthy Ramesh, B. Nielsen, E. Poindexter, D. Keeble. 2000

133 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8d89b84e17d5cd5e1da51a2aefcc1487d780a0e2

Citations in the corpus

• Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics (2009, unknown): “199 , 200 , 201 , 202 Retention, the ability of maintaining a given logic state of polarization (stored information), is another important characteristic for FeRAM applications.”
• Processing, Structure, Properties, and Applications of PZT Thin Films (2007, unknown): “434 , 435 , 436 For example, Friessnegg et al .”