Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius
By V. Consonni, M. Knelangen, L. Geelhaar, A. Trampert, H. Riechert. 2010
150 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/8d68ce041e8de642bd026e47a586d968a28d99fb
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Citations in the corpus
- Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates (2011, methodology): “By using epitaxy-based growth, pyramidal GaN truncated islands, possibly with spherical-cap-shaped islands as intermediate”