Homogeneous large-area graphene layer growth on 6H-SiC(0001)

By C. Virojanadara, M. Syväjärvi, Rositsa Yakimova, L. Johansson, A. Zakharov, T. Balasubramanian. 2008

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Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, methodology): “(a) LEEM image of graphene layers (FOV is 20 μm); (b) Electron reflectivity spectra extracted from the four representative areas 1–4 corresponding to graphene of 1–4 ML thick, respectively; (c) Micro-LEED collected from the four different areas [40].”
Growth of Epitaxial Graphene: Theory and Experiment (2014, background): “gas [289, 290, 291], high quality samples are indeed prepared at temperatures of about 1900 K.”
Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene (2011, background): “Indeed, growth of highquality and homogeneous graphene layers was recently demonstrated [2,3].”
Production and processing of graphene and related materials (2020, methodology): “4(a) and (b) show LEEM images of graphene layers (small domains of 1–2 μm size and thickness >5LG) grown in Ar atmosphere with a better thickness uniformity and quality for graphene grown in Ar [588].”