Silicon-based Molecular Electronics

By T. Rakshit, G. Liang, Avik W. Ghosh, Supriyo Datta. 2003

161 citations recorded by the source corpus.

Molecular electronics on silicon has distinct advantages over its metallic counterpart. We describe a theoretical formalism for transport in semiconductor−molecule heterostructures, formally combining a semiempirical treatment of bulk silicon with a first-principles description of the molecular chemistry and its bonding with silicon. Using this method, we demonstrate that the presence of a semiconducting band-edge can lead to a novel molecular resonant tunneling diode (RTD) that shows negative differential resistance (NDR) when the molecular levels are driven by an STM potential into the semiconducting band gap. The NDR peaks show a clear polarity reversal, appearing for positive bias on a p-doped and negative for an n-doped substrate, a feature that is in agreement with recent experiments by Guisinger et al.1,2

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/8ca89a39111d2f19328aee162e87b947fe18e9d3

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

Citations in the corpus

Molecular transport junctions: vibrational effects (2006, background): “105, 106, 107] carbon[108, 109, 110] and GaAs,[111] have been reported; because transport involving semiconductors is dominated by their band gap, much richer transport behavior can be expected there.[112, 113, 114] Moreover the covalent nature of many molecule-semiconductor bonds implies the potent”