SiGe HBT with fx/fmax of 505 GHz/720 GHz

By B. Heinemann, H. Rücker, R. Barth, F. Barwolf, J. Drews, G. Fischer, A. Fox, O. Fursenko, T. Grabolla, F. Herzel and 14 more. International Electron Devices Meeting, 2016

178 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/8c587860adf01a876a7d6df0acded7582c721e8d

How researchers see this paper

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In Electrical and Electronic Engineering

1. Hadi Sarieddeen
2. Tareq Y.Al-Naffouri
3. Mohamed-Slim Alouini
4. J. Grzyb
5. Ullrich R. Pfeiffer
6. Khaled Ben Letaief
7. Wei Zhang

Citations in the corpus

• An Overview of Signal Processing Techniques for Terahertz Communications (2020, background): “mmWave systems are being pushed for the THz range. Electronic solutions are mainly based on silicon complementary metal-oxidesemiconductor (CMOS) and silicon-germanium (SiGe) BiCMOS technologies [41]–[44], and have demonstrated incredible compactness and compatibility with existing fabrication proce”
• Terahertz Imaging and Sensing Applications With Silicon-Based Technologies (2019, methodology): “ogy achieving 500 GHz fmax [32], and with research activities demonstrating 700-GHz fmax for the next technology node [41], SiGe HBT technology is just on the verge of enabling funda-”