Thermal effects on the characteristic Raman spectrum of molybdenum disulfide (MoS2) of varying thicknesses
By S. Najmaei, Zheng Liu, Pulickel M. Ajayan, J. Lou. 2012
265 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/8be6a3499b3fa0de7a018d11c180a1c782c1dfdc
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Sensing behavior of atomically thin-layered MoS2 transistors. (2013, background): “The E(1)2g and A1g are sensitive to laser power variation, and change in peak position and line width of the spectra was observed.(26,53)”
- Strain-induced direct–indirect bandgap transition and phonon modulation in monolayer WS2 (2015, background): “Because the 1 A mode is reported to be more susceptible to laser-induced heating [57] and temperature [58, 59] than the E’ mode for monolayer TMDs, its unexpected redshift under strain is understandable.”
- Recent Advancement on the Optical Properties of Two-Dimensional Molybdenum Disulfide (MoS2) Thin Films (2015, background): “Finally, the intensity of resonance Raman modes have an observed temperature dependence in some studies [85,98–100,106].”
- Lattice vibrational modes and phonon thermal conductivity of monolayer MoS2 (2013, background): “The positive γis consistent with the redshift of the Raman-active modes with temperature observed in experiments [9,19,48-50].”